By Forrest Mims
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Extra resources for Electrical - Engineer's Mini-Notebook Basic Semiconductor Circuits
Sample text
2(b), respectively. 2(a). The body is therefore only partially depleted. Hence, these devices are referred to as partially depleted SOI devices. , the kink and history effects. If the thin-film is made thinner than the depletion depth, typically about 100 nm or less, the whole body region is depleted [64]. This type of devices is referred to as fully depleted devices. Consequently, the body region of the Gate Source Drain Undepleted region Poly Heavily doped Si Insulator Oxide Weakly doped Si Depletion region (a) PD SOI Gate Source Drain Insulator (b) FD SOI ÙÖ ¾º¾ Cross section of (a) a partially depleted and (b) a fully depleted SOI MOSFET device.
Instead, the accuracy reveals how much of the output that is significant after accounting all the non-ideal behavior and errors appearing during the conversion [35]. Ë Ø ÓÒ ¿º¿ È Ö ÓÖÑ Ò ¿º¿º¾ ÁÒÔÙØ Ò Û Ø Å ×ÙÖ × The input bandwidth of an analog-to-digital converter is defined by the time constant given by the total input capacitance and the total input resistance. In a flash ADC the input capacitance is to a large extent determined by the parasitic input capacitances of the comparators, to which the input signal is applied.
This thesis is organized as follows. An introduction to the SOI technology is given in Chapter 2. In Chapter 3 an introduction and background to analog-to-digital conversion is presented together with the performance measures used in this thesis. The proposed circuit topologies in this work are presented in Chapter 4. In Chapter 5 the modeling of the flash ADCs is presented. The simulation results of these models are used in the design of the converters presented in Chapter 6. The transistor level simulations results from the design phase of the ADCs are given in Chapter 7, together with the results of the measurements of the implemented ADCs.
Electrical - Engineer's Mini-Notebook Basic Semiconductor Circuits by Forrest Mims
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